DIP(SOP)23 IPM Features and Benefits:
One, high power density:
Three, high design freedom:

| Product number |
Voltage (V) |
Current (A) |
Insulation withstand voltage (KV) | Optimization Switch (KHz) | Device | Recommend power (W) | Thermal interface | Bootstrap diode | Undervoltage protection | Overcurrent protection | Temperature Output | Interlock |
|
VF (Typ) (V) |
Rth (j-c)(Max) (℃/W) |
|
VCE (SAT)(Typ) (V) |
|||||||||||||||
| XNM50360ABS | 600 | 3 | 1.5 | 20 | MOSFET | 120 | Plastics | Yes | Yes | No | VOT | Yes | 3 | 1.5 | 10 |
| XNM50350ATS | 500 | 3 | 1.5 | 20 | MOSFET | 120 | Plastics | Yes | Yes | No | NTC | Yes | 2.6 | 1.5 | 6.8 |
| XNM50550ATS | 500 | 5 | 1.5 | 20 | MOSFET | 180 | Plastics | Yes | Yes | No | NTC | Yes | 2 | 1.5 | 6 |
| XNS50360AT(S) | 600 | 3 | 1.5 | 20 | IGBT | 150 | Plastics | Yes | Yes | No | NTC | Yes | 2 | 1.5 | 6.5 |
| XNS50360AB(S) | 600 | 3 | 1.5 | 20 | IGBT | 150 | Plastics | Yes | Yes | No | VOT | Yes | 2 | 1.5 | 6.5 |
| XNS50660AT(S) | 600 | 6 | 1.5 | 20 | IGBT | 200 | Plastics | Yes | Yes | No | NTC | Yes | 2.1 | 1.7 | 5.5 |
| XNS50660AB(S) | 600 | 6 | 1.5 | 20 | IGBT | 200 | Plastics | Yes | Yes | No | VOT | Yes | 2.1 | 1.7 | 5.5 |